| Parameters |
| Mfr |
Microchip Technology |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) |
1200 V |
| Current - Continuous Drain (Id) @ 25°C |
21A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
20V |
| Rds On (Max) @ Id, Vgs |
225mOhm @ 8A, 20V |
| Vgs(th) (Max) @ Id |
3.26V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs |
34 nC @ 20 V |
| Vgs (Max) |
+23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds |
510 pF @ 1000 V |
| FET Feature |
- |
| Power Dissipation (Max) |
125W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D2PAK-7 |
| Package / Case |
TO-263-8, DPak (7 Leads + Tab) |
| Base Product Number |
MSC180 |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
150-MSC180SMA120SA |
| Standard Package |
50 |
N-Channel 1200 V 21A (Tc) 125W (Tc) Surface Mount D2PAK-7