| Parameters |
| Mfr |
GeneSiC Semiconductor |
| Series |
- |
| Package |
Tube |
| Product Status |
Obsolete |
| Technology |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) |
8000 V |
| Current - Average Rectified (Io) |
50mA |
| Voltage - Forward (Vf) (Max) @ If |
4.6 V @ 50 mA |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0 ns |
| Current - Reverse Leakage @ Vr |
3.8 µA @ 8000 V |
| Capacitance @ Vr, F |
25pF @ 1V, 1MHz |
| Mounting Type |
Through Hole |
| Package / Case |
Axial |
| Supplier Device Package |
- |
| Operating Temperature - Junction |
-55°C ~ 175°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.10.0070 |
| Other Names |
1242-1257 |
| Standard Package |
10 |
Diode 8000 V 50mA Through Hole