Microsemi Corporation JAN2N5014S
JAN2N5014S
- Manufacturer: Microsemi Corporation
- Manufacturer's number: Microsemi Corporation JAN2N5014S
- Package: Bulk
- Datasheet: -
- Stock: 1925
- SKU: JAN2N5014S
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/727 |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 10V |
| Power - Max | 1 W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 (TO-205AD) |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1 |
Bipolar (BJT) Transistor NPN 900 V 200 mA 1 W Through Hole TO-39 (TO-205AD)
