| Parameters |
| Mfr |
Powerex Inc. |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
Silicon Carbide (SiC) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
- |
| Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
| Rds On (Max) @ Id, Vgs |
25mOhm @ 100A, 20V |
| Vgs(th) (Max) @ Id |
5V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs |
500nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds |
10200pF @ 800V |
| Power - Max |
900W |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Chassis Mount |
| Package / Case |
Module |
| Supplier Device Package |
Module |
| Base Product Number |
QJD1210 |
| RoHS Status |
RoHS Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
1 |
Mosfet Array 1200V (1.2kV) 100A (Tc) 900W Chassis Mount Module