Vishay Siliconix SI5511DC-T1-E3

SI5511DC-T1-E3

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI5511DC-T1-E3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9457
SKU: SI5511DC-T1-E3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Obsolete
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4A, 3.6A
Rds On (Max) @ Id, Vgs	55mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 15V
Power - Max	3.1W, 2.6W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	1206-8 ChipFET™
Base Product Number	SI5511
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

Mosfet Array 30V 4A, 3.6A 3.1W, 2.6W Surface Mount 1206-8 ChipFET™