| Parameters |
| Mfr |
Microsemi Corporation |
| Series |
POWER MOS 7® |
| Package |
Tube |
| Product Status |
Obsolete |
| IGBT Type |
PT |
| Voltage - Collector Emitter Breakdown (Max) |
900 V |
| Current - Collector (Ic) (Max) |
43 A |
| Current - Collector Pulsed (Icm) |
60 A |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 15A |
| Power - Max |
250 W |
| Switching Energy |
200µJ (off) |
| Input Type |
Standard |
| Gate Charge |
60 nC |
| Td (on/off) @ 25°C |
9ns/33ns |
| Test Condition |
600V, 15A, 4.3Ohm, 15V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220 [K] |
| Base Product Number |
APT15GP90 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
50 |
IGBT PT 900 V 43 A 250 W Through Hole TO-220 [K]