| Parameters |
| Mfr |
SemiQ |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| Diode Configuration |
2 Independent |
| Technology |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) |
650 V |
| Current - Average Rectified (Io) (per Diode) |
193A (DC) |
| Voltage - Forward (Vf) (Max) @ If |
1.65 V @ 100 A |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0 ns |
| Current - Reverse Leakage @ Vr |
250 µA @ 650 V |
| Operating Temperature - Junction |
-55°C ~ 175°C |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Supplier Device Package |
SOT-227 |
| Base Product Number |
GHXS100 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Affected |
| ECCN |
EAR99 |
| HTSUS |
8541.10.0080 |
| Other Names |
1560-GHXS100B065S-D3 |
| Standard Package |
10 |
Diode Array 2 Independent 650 V 193A (DC) Chassis Mount SOT-227-4, miniBLOC