| Parameters |
| Mfr |
Cypress Semiconductor Corp |
| Series |
F-RAM™ |
| Package |
Tray |
| Product Status |
Active |
| DigiKey Programmable |
Not Verified |
| Memory Type |
Non-Volatile |
| Memory Format |
FRAM |
| Technology |
FRAM (Ferroelectric RAM) |
| Memory Size |
4Mbit |
| Memory Organization |
256K x 16 |
| Memory Interface |
Parallel |
| Write Cycle Time - Word, Page |
110ns |
| Access Time |
110 ns |
| Voltage - Supply |
2.7V ~ 3.6V |
| Operating Temperature |
-40°C ~ 85°C (TA) |
| Mounting Type |
Surface Mount |
| Package / Case |
48-TFBGA |
| Supplier Device Package |
48-FBGA (6x8) |
| Base Product Number |
FM22LD16 |
| RoHS Status |
RoHS non-compliant |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| REACH Status |
Vendor Undefined |
| ECCN |
3A991A2 |
| HTSUS |
8542.32.0070 |
| Other Names |
2832-FM22LD16-55-BG |
| Standard Package |
6 |
FRAM (Ferroelectric RAM) Memory IC 4Mbit Parallel 110 ns 48-FBGA (6x8)