Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
N and P-Channel Complementary |
FET Feature |
Standard |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
5.3A (Ta), 3.4A (Ta) |
Rds On (Max) @ Id, Vgs |
30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250µA, 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
10.6nC @ 10V, 7.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
500pF @ 15V, 336pF @ 25V |
Power - Max |
800mW |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
6-UDFN Exposed Pad |
Supplier Device Package |
U-DFN2020-6 (Type B) |
Base Product Number |
DMC3032 |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
31-DMC3032LFDB-7 |
Standard Package |
3,000 |
Mosfet Array 30V 5.3A (Ta), 3.4A (Ta) 800mW Surface Mount U-DFN2020-6 (Type B)