Parameters |
Mfr |
Diodes Incorporated |
Series |
Automotive, AEC-Q101 |
Package |
Bulk |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
N and P-Channel Complementary |
FET Feature |
Standard |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
3.4A (Ta), 2.8A (Ta) |
Rds On (Max) @ Id, Vgs |
60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id |
2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
13nC @ 10V, 9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 15V, 420pF @ 15V |
Power - Max |
840mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package |
TSOT-26 |
Base Product Number |
DMG6602 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
31-DMG6602SVTQ-7-52 |
Standard Package |
3,000 |
Mosfet Array 30V 3.4A (Ta), 2.8A (Ta) 840mW (Ta) Surface Mount TSOT-26