Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
4 N-Channel (Half Bridge) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
6A (Ta) |
Rds On (Max) @ Id, Vgs |
33mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
11.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
683pF @ 50V |
Power - Max |
900mW |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
12-PowerVDFN |
Supplier Device Package |
V-DFN5045-12 (Type C) |
Base Product Number |
DMHT10 |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
31-DMHT10H032LFJ-13TR |
Standard Package |
3,000 |
Mosfet Array 100V 6A (Ta) 900mW Surface Mount V-DFN5045-12 (Type C)