Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
8A (Tc) |
Rds On (Max) @ Id, Vgs |
222mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
6.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
384pF @ 25V |
Power - Max |
2.2W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount, Wettable Flank |
Package / Case |
8-PowerTDFN |
Supplier Device Package |
PowerDI5060-8 (Type R) |
Base Product Number |
DMN10 |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
31-DMN10H220LPDW-13TR |
Standard Package |
2,500 |
Mosfet Array 100V 8A (Tc) 2.2W (Ta) Surface Mount, Wettable Flank PowerDI5060-8 (Type R)