Diodes Incorporated DMN2014LHAB-13

MOSFET BVDSS: 8V~24V U-DFN2030-6

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMN2014LHAB-13
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 6444
SKU: DMN2014LHAB-13
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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Rds On (Max) @ Id, Vgs	13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1550pF @ 10V
Power - Max	800mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-UFDFN Exposed Pad
Supplier Device Package	U-DFN2030-6 (Type B)
Base Product Number	DMN2014
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMN2014LHAB-13TR
Standard Package	10,000

Mosfet Array 20V 9A (Ta) 800mW (Ta) Surface Mount U-DFN2030-6 (Type B)