Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel |
FET Feature |
Standard |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
6.3A (Ta) |
Rds On (Max) @ Id, Vgs |
32mOhm @ 1.7A, 4.5V |
Vgs(th) (Max) @ Id |
1.4V @ 160µA |
Gate Charge (Qg) (Max) @ Vgs |
5.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
523pF @ 10V |
Power - Max |
1W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
4-XFBGA, DSBGA |
Supplier Device Package |
X4-DSN1111-4 |
Base Product Number |
DMN2030 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
31-DMN2030UCA4-7 |
Standard Package |
3,000 |
Mosfet Array 20V 6.3A (Ta) 1W (Ta) Surface Mount X4-DSN1111-4