Diodes Incorporated DMT10H032LDV-13

MOSFET BVDSS: 61V~100V POWERDI33

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMT10H032LDV-13
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9316
SKU: DMT10H032LDV-13
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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Rds On (Max) @ Id, Vgs	36mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	683pF @ 50V
Power - Max	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	PowerDI3333-8 (Type UXC)
Base Product Number	DMT10
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMT10H032LDV-13TR
Standard Package	3,000

Mosfet Array 100V 18A (Tc) 1W (Ta) Surface Mount PowerDI3333-8 (Type UXC)