Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel |
FET Feature |
Standard |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
25A (Tc) |
Rds On (Max) @ Id, Vgs |
33mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
544pF @ 50V |
Power - Max |
2.7W (Ta), 39W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Supplier Device Package |
PowerDI5060-8 (Type UXD) |
Base Product Number |
DMTH10 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
31-DMTH10H038SPDW-13 |
Standard Package |
2,500 |
Mosfet Array 100V 25A (Tc) 2.7W (Ta), 39W (Tc) Surface Mount PowerDI5060-8 (Type UXD)