Parameters |
Mfr |
Diodes Incorporated |
Series |
Automotive, AEC-Q101 |
Package |
Bulk |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel |
FET Feature |
Standard |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
9.2A (Ta), 33.2A (Tc) |
Rds On (Max) @ Id, Vgs |
19mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
864pF @ 30V |
Power - Max |
2.5W (Ta), 37.5W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerTDFN |
Supplier Device Package |
PowerDI5060-8 |
Base Product Number |
DMTH6016 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
31-DMTH6016LPDQ-13-52 |
Standard Package |
2,500 |
Mosfet Array 60V 9.2A (Ta), 33.2A (Tc) 2.5W (Ta), 37.5W (Tc) Surface Mount PowerDI5060-8