Parameters |
Mfr |
Diodes Incorporated |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
650 V |
Current - Average Rectified (Io) |
4A |
Voltage - Forward (Vf) (Max) @ If |
1.7 V @ 4 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
170 µA @ 650 V |
Capacitance @ Vr, F |
- |
Mounting Type |
Surface Mount |
Package / Case |
4-PowerTSFN |
Supplier Device Package |
DFN8080 |
Operating Temperature - Junction |
-55°C ~ 175°C |
ECCN |
OBSOLETE |
Other Names |
31-LSC04065Q8 |
Standard Package |
1 |
Diode 650 V 4A Surface Mount DFN8080