Parameters | |
---|---|
Mfr | Diodes Incorporated |
Series | - |
Package | Bulk |
Product Status | Obsolete |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 10A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 250 µA @ 650 V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | 4-PowerTSFN |
Supplier Device Package | DFN8080 |
Operating Temperature - Junction | -55°C ~ 175°C |
ECCN | OBSOLETE |
Other Names | 31-LSC10065Q8 |
Standard Package | 1 |