Parameters |
Mfr |
GE Aerospace |
Series |
SiC Power |
Package |
Bulk |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
6 N-Channel (3-Phase Bridge) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C |
425A (Tc) |
Rds On (Max) @ Id, Vgs |
4.45mOhm @ 425A, 20V |
Vgs(th) (Max) @ Id |
4.5V @ 160mA |
Gate Charge (Qg) (Max) @ Vgs |
1207nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds |
29100pF @ 900V |
Power - Max |
1250W (Tc) |
Operating Temperature |
-55°C ~ 150°C (Tc) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
- |
Base Product Number |
GE17045 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
Not Applicable |
REACH Status |
Vendor Undefined |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
4014-GE17045EEA3 |
Standard Package |
1 |
Mosfet Array 1700V (1.7kV) 425A (Tc) 1250W (Tc) Chassis Mount