Parameters |
Mfr |
GE Aerospace |
Series |
SiC Power |
Package |
Bulk |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel (Half Bridge) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C |
1.275kA |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 1275A, 20V |
Vgs(th) (Max) @ Id |
4.5V @ 480mA |
Gate Charge (Qg) (Max) @ Vgs |
3621nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds |
82nF @ 600V |
Power - Max |
3.75kW |
Operating Temperature |
-55°C ~ 150°C (Tc) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
- |
Base Product Number |
GE17140 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
Not Applicable |
REACH Status |
Vendor Undefined |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
4014-GE17140CEA3 |
Standard Package |
1 |
Mosfet Array 1700V (1.7kV) 1.275kA 3.75kW Chassis Mount