| Parameters |
| Mfr |
GE Aerospace |
| Series |
SiC Power |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
Silicon Carbide (SiC) |
| Configuration |
2 N-Channel (Half Bridge) |
| FET Feature |
- |
| Drain to Source Voltage (Vdss) |
1700V (1.7kV) |
| Current - Continuous Drain (Id) @ 25°C |
1.275kA |
| Rds On (Max) @ Id, Vgs |
1.5Ohm @ 1275A, 20V |
| Vgs(th) (Max) @ Id |
4.5V @ 480mA |
| Gate Charge (Qg) (Max) @ Vgs |
3621nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds |
82nF @ 600V |
| Power - Max |
3.75kW |
| Operating Temperature |
-55°C ~ 150°C (Tc) |
| Mounting Type |
Chassis Mount |
| Package / Case |
Module |
| Supplier Device Package |
- |
| Base Product Number |
GE17140 |
| RoHS Status |
RoHS non-compliant |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| REACH Status |
Vendor Undefined |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
4014-GE17140CEA3 |
| Standard Package |
1 |
Mosfet Array 1700V (1.7kV) 1.275kA 3.75kW Chassis Mount