GeneSiC Semiconductor GD10MPS12E

DIODE SIL CARB 1.2KV 29A TO252-2

Manufacturer: GeneSiC Semiconductor
Manufacturer's number: GeneSiC Semiconductor GD10MPS12E
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 5703
SKU: GD10MPS12E
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Unit Price: $3.8000

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Details

Parameters
Mfr	GeneSiC Semiconductor
Series	SiC Schottky MPS™
Package	Tape & Reel (TR)
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	29A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 10 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	5 µA @ 1200 V
Capacitance @ Vr, F	367pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252-2
Operating Temperature - Junction	-55°C ~ 175°C
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.10.0080
Standard Package	2,500

Diode 1200 V 29A Surface Mount TO-252-2