Parameters |
Mfr |
GeneSiC Semiconductor |
Series |
SiC Schottky MPS™ |
Package |
Tube |
Product Status |
Active |
Diode Configuration |
2 Independent |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
1700 V |
Current - Average Rectified (Io) (per Diode) |
50A (DC) |
Voltage - Forward (Vf) (Max) @ If |
1.8 V @ 25 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
20 µA @ 1700 V |
Operating Temperature - Junction |
-55°C ~ 175°C |
Mounting Type |
Chassis Mount |
Package / Case |
SOT-227-4, miniBLOC |
Supplier Device Package |
SOT-227 |
Base Product Number |
GD2X |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.10.0080 |
Other Names |
1242-GD2X25MPS17N |
Standard Package |
10 |
Diode Array 2 Independent 1700 V 50A (DC) Chassis Mount SOT-227-4, miniBLOC