| Parameters |
| Mfr |
GeneSiC Semiconductor |
| Series |
SiC Schottky MPS™ |
| Package |
Tube |
| Product Status |
Active |
| Diode Configuration |
2 Independent |
| Technology |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) |
650 V |
| Current - Average Rectified (Io) (per Diode) |
70A (DC) |
| Voltage - Forward (Vf) (Max) @ If |
1.8 V @ 60 A |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0 ns |
| Current - Reverse Leakage @ Vr |
10 µA @ 650 V |
| Operating Temperature - Junction |
-55°C ~ 175°C |
| Mounting Type |
Chassis Mount |
| Package / Case |
SOT-227-4, miniBLOC |
| Supplier Device Package |
SOT-227 |
| Base Product Number |
GD2X |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.10.0080 |
| Other Names |
1242-GD2X60MPS06N |
| Standard Package |
10 |
Diode Array 2 Independent 650 V 70A (DC) Chassis Mount SOT-227-4, miniBLOC