GeneSiC Semiconductor GD30MPS12H

DIODE SIL CARB 1.2KV 55A TO247-2

Manufacturer: GeneSiC Semiconductor
Manufacturer's number: GeneSiC Semiconductor GD30MPS12H
Package: Tube
Datasheet: PDF
Stock: 980
SKU: GD30MPS12H
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Details

Parameters
Mfr	GeneSiC Semiconductor
Series	SiC Schottky MPS™
Package	Tube
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	55A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 30 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	20 µA @ 1200 V
Capacitance @ Vr, F	1101pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-247-2
Supplier Device Package	TO-247-2
Operating Temperature - Junction	-55°C ~ 175°C
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	1242-GD30MPS12H
Standard Package	30

Diode 1200 V 55A Through Hole TO-247-2