GeneSiC Semiconductor GD60MPS06H

DIODE SIL CARB 650V 82A TO247-2

Manufacturer: GeneSiC Semiconductor
Manufacturer's number: GeneSiC Semiconductor GD60MPS06H
Package: Tube
Datasheet: PDF
Stock: 1
SKU: GD60MPS06H
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Details

Parameters
Mfr	GeneSiC Semiconductor
Series	SiC Schottky MPS™
Package	Tube
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	82A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 60 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	10 µA @ 650 V
Capacitance @ Vr, F	1463pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-247-2
Supplier Device Package	TO-247-2
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	GD60
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	1242-GD60MPS06H
Standard Package	30

Diode 650 V 82A Through Hole TO-247-2