Parameters | |
---|---|
Mfr | Global Power Technology Co. Ltd |
Series | - |
Package | Bulk |
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) | 12A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
Capacitance @ Vr, F | 260pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-252 |
Operating Temperature - Junction | -55°C ~ 175°C |
REACH Status | Vendor Undefined |
Other Names | 4436-G3S12003C |
Standard Package | 1 |