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Global Power Technology Co. Ltd G3S12005H
DIODE SIL CARB 1.2KV 21A TO220F
- Manufacturer: Global Power Technology Co. Ltd
- Manufacturer's number: Global Power Technology Co. Ltd G3S12005H
- Package: Bulk
- Datasheet: -
- Stock: 6183
- SKU: G3S12005H
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Global Power Technology Co. Ltd |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 21A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Capacitance @ Vr, F | 475pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | -55°C ~ 175°C |
| REACH Status | Vendor Undefined |
| Other Names | 4436-G3S12005H |
| Standard Package | 1 |
Diode 1200 V 21A Through Hole TO-220F
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