Parameters | |
---|---|
Mfr | Global Power Technology Co. Ltd |
Series | - |
Package | Bulk |
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 9.7A |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 6 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
Capacitance @ Vr, F | 181pF @ 0V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 Full Pack |
Supplier Device Package | TO-220F |
Operating Temperature - Junction | -55°C ~ 175°C |
REACH Status | Vendor Undefined |
Other Names | 4436-G4S06506HT |
Standard Package | 1 |