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Global Power Technology Co. Ltd G4S06510DT
DIODE SIL CARBIDE 650V 32A TO263
- Manufacturer: Global Power Technology Co. Ltd
- Manufacturer's number: Global Power Technology Co. Ltd G4S06510DT
- Package: Bulk
- Datasheet: -
- Stock: 3712
- SKU: G4S06510DT
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Global Power Technology Co. Ltd |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 32A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| REACH Status | Vendor Undefined |
| Other Names | 4436-G4S06510DT |
| Standard Package | 1 |
Diode 650 V 32A Surface Mount TO-263
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