Parameters |
Voltage - Forward (Vf) (Max) @ If |
1.7 V @ 10 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
50 µA @ 650 V |
Capacitance @ Vr, F |
550pF @ 0V, 1MHz |
Mounting Type |
Surface Mount |
Package / Case |
4-PowerTSFN |
Supplier Device Package |
4-DFN (8x8) |
Operating Temperature - Junction |
-55°C ~ 175°C |
REACH Status |
Vendor Undefined |
Other Names |
4436-G4S06510QT |
Standard Package |
1 |
Mfr |
Global Power Technology Co. Ltd |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
650 V |
Current - Average Rectified (Io) |
44.9A |
Diode 650 V 44.9A Surface Mount 4-DFN (8x8)