Parameters |
Mfr |
Global Power Technology Co. Ltd |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Diode Configuration |
1 Pair Common Cathode |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
1200 V |
Current - Average Rectified (Io) (per Diode) |
33.2A (DC) |
Voltage - Forward (Vf) (Max) @ If |
1.6 V @ 10 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
30 µA @ 1200 V |
Operating Temperature - Junction |
-55°C ~ 175°C |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AB |
REACH Status |
Vendor Undefined |
Other Names |
4436-G4S12020BM |
Standard Package |
1 |
Diode Array 1 Pair Common Cathode 1200 V 33.2A (DC) Through Hole TO-247-3