| Parameters |
| Mfr |
Global Power Technology Co. Ltd |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) |
650 V |
| Current - Average Rectified (Io) |
30.5A |
| Voltage - Forward (Vf) (Max) @ If |
1.7 V @ 8 A |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0 ns |
| Current - Reverse Leakage @ Vr |
50 µA @ 650 V |
| Capacitance @ Vr, F |
395pF @ 0V, 1MHz |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Supplier Device Package |
8-DFN (4.9x5.75) |
| Operating Temperature - Junction |
-55°C ~ 175°C |
| REACH Status |
Vendor Undefined |
| Other Names |
4436-G4S6508Z |
| Standard Package |
1 |
Diode 650 V 30.5A Surface Mount 8-DFN (4.9x5.75)