Global Power Technology-GPT G52YT

DIODE SIL CARBIDE 650V 5.8A SMA

Manufacturer: Global Power Technology-GPT
Manufacturer's number: Global Power Technology-GPT G52YT
Package: Cut Tape (CT)
Datasheet: PDF
Stock: 7023
SKU: G52YT
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Details

Parameters
Mfr	Global Power Technology-GPT
Series	-
Package	Cut Tape (CT)
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	5.8A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 2 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Capacitance @ Vr, F	116.75pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Supplier Device Package	SMA
Operating Temperature - Junction	-55°C ~ 175°C
REACH Status	REACH info available upon request
ECCN	EAR99
HTSUS	8541.10.0080
Standard Package	30

Diode 650 V 5.8A Surface Mount SMA