Global Power Technology-GPT G5S12008A

DIODE SIC 1.2KV 24.8A TO220AC

Manufacturer: Global Power Technology-GPT
Manufacturer's number: Global Power Technology-GPT G5S12008A
Package: Cut Tape (CT)
Datasheet: PDF
Stock: 7383
SKU: G5S12008A
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $8.0700

Ext Price: $8.0700

Details

Parameters
Mfr	Global Power Technology-GPT
Series	-
Package	Cut Tape (CT)
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	24.8A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 8 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 1200 V
Capacitance @ Vr, F	550pF @ 0V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Operating Temperature - Junction	-55°C ~ 175°C
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH info available upon request
ECCN	EAR99
HTSUS	8541.10.0080
Standard Package	30

Diode 1200 V 24.8A Through Hole TO-220AC