Parameters |
Mfr |
Global Power Technology-GPT |
Series |
- |
Package |
Cut Tape (CT) |
Product Status |
Active |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
1200 V |
Current - Average Rectified (Io) |
63.5A |
Voltage - Forward (Vf) (Max) @ If |
1.7 V @ 20 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
50 µA @ 1200 V |
Capacitance @ Vr, F |
1320pF @ 0V, 1MHz |
Mounting Type |
Through Hole |
Package / Case |
TO-220-2 |
Supplier Device Package |
TO-220AC |
Operating Temperature - Junction |
-55°C ~ 175°C |
REACH Status |
REACH info available upon request |
ECCN |
EAR99 |
HTSUS |
8541.10.0080 |
Standard Package |
30 |
Diode 1200 V 63.5A Through Hole TO-220AC