Parameters |
Mfr |
Goford Semiconductor |
Series |
G |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 P-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
40V |
Current - Continuous Drain (Id) @ 25°C |
9A (Tc) |
Rds On (Max) @ Id, Vgs |
20mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
42nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
2365pF @ 20V |
Power - Max |
2.1W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SOP |
Base Product Number |
G200 |
RoHS Status |
ROHS3 Compliant |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
4,000 |
Mosfet Array 40V 9A (Tc) 2.1W (Tc) Surface Mount 8-SOP