Goford Semiconductor G200P04S2

P-40V,-9A,RD(MAX)<20M@-10V,VTH-1

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Details

Mosfet Array 40V 9A (Tc) 2.1W (Tc) Surface Mount 8-SOP

Parameters
Mfr	Goford Semiconductor
Series	G
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 P-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Rds On (Max) @ Id, Vgs	20mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2365pF @ 20V
Power - Max	2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
Base Product Number	G200
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	4,000