| Parameters |
| Mfr |
NXP USA Inc. |
| Series |
TrenchMOS™ |
| Package |
Tape & Reel (TR) |
| Product Status |
Obsolete |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
125mA |
| Rds On (Max) @ Id, Vgs |
8Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id |
1.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs |
0.35nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
18.5pF @ 5V |
| Power - Max |
200mW |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package |
6-TSSOP |
| Base Product Number |
PMGD8 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Standard Package |
3,000 |
Mosfet Array 30V 125mA 200mW Surface Mount 6-TSSOP