| Parameters |
| Mfr |
GeneSiC Semiconductor |
| Series |
SiC Schottky MPS™ |
| Package |
Tube |
| Product Status |
Obsolete |
| Technology |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) |
1700 V |
| Current - Average Rectified (Io) |
52A |
| Voltage - Forward (Vf) (Max) @ If |
1.8 V @ 25 A |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0 ns |
| Current - Reverse Leakage @ Vr |
10 µA @ 1700 V |
| Capacitance @ Vr, F |
2350pF @ 1V, 1MHz |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-2 |
| Supplier Device Package |
TO-247-2 |
| Operating Temperature - Junction |
-55°C ~ 175°C |
| Base Product Number |
GB25MPS17 |
| RoHS Status |
RoHS Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.10.0080 |
| Other Names |
1242-1344 |
| Standard Package |
30 |
Diode 1700 V 52A Through Hole TO-247-2