Parameters |
Mfr |
Infineon Technologies |
Series |
CoolSiC™ |
Package |
Tray |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel (Half Bridge) |
FET Feature |
Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) |
1200V |
Current - Continuous Drain (Id) @ 25°C |
170A (Tj) |
Rds On (Max) @ Id, Vgs |
4mOhm @ 200A, 18V |
Vgs(th) (Max) @ Id |
5.15V @ 80mA |
Gate Charge (Qg) (Max) @ Vgs |
594nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds |
17600pF @ 800V |
Power - Max |
20mW |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Base Product Number |
FF4MR12 |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8542.39.0001 |
Other Names |
448-FF4MR12W2M1HB11BPSA1 |
Standard Package |
15 |
Mosfet Array 1200V 170A (Tj) 20mW Chassis Mount Module