Parameters |
Mfr |
Infineon Technologies |
Series |
CoolSiC™ |
Package |
Tray |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel |
FET Feature |
Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) |
1200V |
Current - Continuous Drain (Id) @ 25°C |
100A (Tj) |
Rds On (Max) @ Id, Vgs |
8.1mOhm @ 100A, 18V |
Vgs(th) (Max) @ Id |
5.15V @ 40mA |
Gate Charge (Qg) (Max) @ Vgs |
297nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds |
8800pF @ 800V |
Power - Max |
20mW |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
AG-EASY1B |
Base Product Number |
FF8MR12 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
Standard Package |
30 |
Mosfet Array 1200V 100A (Tj) 20mW Chassis Mount AG-EASY1B