Parameters |
Mfr |
Infineon Technologies |
Series |
CoolSiC™+ |
Package |
Bulk |
Product Status |
Active |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
600 V |
Current - Average Rectified (Io) |
10A |
Voltage - Forward (Vf) (Max) @ If |
2.1 V @ 10 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
90 µA @ 600 V |
Capacitance @ Vr, F |
290pF @ 1V, 1MHz |
Mounting Type |
Through Hole |
Package / Case |
TO-220-2 |
Supplier Device Package |
PG-TO220-2-2 |
Operating Temperature - Junction |
-55°C ~ 175°C |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
Diode 600 V 10A Through Hole PG-TO220-2-2