Parameters | |
---|---|
Mfr | Infineon Technologies |
Series | CoolSiC™+ |
Package | Bulk |
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 2A |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 330 µA @ 650 V |
Capacitance @ Vr, F | 70pF @ 1V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-2 |
Operating Temperature - Junction | -55°C ~ 175°C |
Moisture Sensitivity Level (MSL) | Vendor Undefined |
REACH Status | REACH Unaffected |
Other Names | 2156-IDK02G65C5XTMA2-448 |
Standard Package | 1 |