Infineon Technologies IDV03S60C

DIODE SIL CARB 600V 3A TO220-22

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IDV03S60C
Package: Bulk
Datasheet: PDF
Stock: 1
SKU: IDV03S60C
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Details

Parameters
Mfr	Infineon Technologies
Series	thinQ!™
Package	Bulk
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io)	3A (DC)
Voltage - Forward (Vf) (Max) @ If	1.9 V @ 3 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	30 µA @ 600 V
Capacitance @ Vr, F	90pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2 Full Pack
Supplier Device Package	PG-TO220-2-22
Operating Temperature - Junction	-55°C ~ 175°C
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.10.0080
Standard Package	1

Diode 600 V 3A (DC) Through Hole PG-TO220-2-22