Infineon Technologies IDW10G65C5XKSA1

DIODE SIL CARB 650V 10A TO247-3

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IDW10G65C5XKSA1
Package: Bulk
Datasheet: PDF
Stock: 6962
SKU: IDW10G65C5XKSA1
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolSiC™+
Package	Bulk
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	10A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	180 µA @ 650 V
Capacitance @ Vr, F	300pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3
Operating Temperature - Junction	-55°C ~ 175°C
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-IDW10G65C5XKSA1-448
Standard Package	1

Diode 650 V 10A Through Hole PG-TO247-3