Infineon Technologies IDW12G65C5
DIODE SIL CARB 650V 12A TO247-3
- Manufacturer: Infineon Technologies
- Manufacturer's number: Infineon Technologies IDW12G65C5
- Package: Bulk
- Datasheet: PDF
- Stock: 7100
- SKU: IDW12G65C5
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | CoolSiC™+ |
| Package | Bulk |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 500 µA @ 650 V |
| Capacitance @ Vr, F | 360pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3-41 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| ECCN | EAR99 |
| HTSUS | 8542.39.0001 |
| Standard Package | 1 |
Diode 650 V 12A Through Hole PG-TO247-3-41
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