Infineon Technologies IPG20N04S408BATMA1

MOSFET 2N-CH 8TDSON

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPG20N04S408BATMA1
Package: Tape & Reel (TR)
Datasheet: -
Stock: 1094
SKU: IPG20N04S408BATMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS™-T2
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Rds On (Max) @ Id, Vgs	7.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2940pF @ 25V
Power - Max	65W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TDSON-8-10
Base Product Number	IPG20N
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

Mosfet Array 40V 20A (Tc) 65W (Tc) Surface Mount, Wettable Flank PG-TDSON-8-10