Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
N and P-Channel |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
5.8A, 4.3A |
Rds On (Max) @ Id, Vgs |
45mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
520pF @ 25V |
Power - Max |
2.5W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SOIC |
Base Product Number |
AUIRF7379 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
Mosfet Array 30V 5.8A, 4.3A 2.5W Surface Mount 8-SOIC