Parameters | |
---|---|
Mfr | International Rectifier |
Series | HEXFET® |
Package | Bulk |
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.2A, 4.3A |
Rds On (Max) @ Id, Vgs | 50mOhm @ 2.6A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Base Product Number | IRF73 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 0000.00.0000 |
Standard Package | 1 |