Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
25V |
Current - Continuous Drain (Id) @ 25°C |
25A |
Rds On (Max) @ Id, Vgs |
3.4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs |
15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
1321pF @ 13V |
Power - Max |
25W, 28W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerVDFN |
Supplier Device Package |
Dual PQFN (5x4) |
Base Product Number |
IRFH4257 |
RoHS Status |
Not applicable |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
Mosfet Array 25V 25A 25W, 28W Surface Mount Dual PQFN (5x4)